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提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控.通常情况下,为了得到栅极氧化膜在器件使用温度下的TDDB寿命,必须得到三个在一定温度下的不同电压下的TDDB寿命.然后使用一定模型(E模型或者1/E模型)和这个三个寿命推算出氧化膜在器件使用温度下的寿命.比较常用的是E模型.但是为了保证使用E模型推得的寿命的准确性,必须尽量使用较低电压下的寿命来推算想要的寿命.显然,为了获得低电压下的TDDB寿命,必须花费相当长的测试时间(甚至1个月).这对于工艺的实时监控来说,是不能接受的.文中提出一种新的推算栅氧化膜TDDB寿命的方法.运用该方法,可以快速、准确获得栅氧化膜的TDDB寿命,而花费的测试时间不到普通方法的1/1000000.在该方法中,巧妙地同时利用了1/E模型和E模型.
A new method for fast calculation of the TDDB lifetime of a gate oxide film is proposed, which can be used for real-time monitoring of the process.Generally, in order to obtain the TDDB lifetime of the gate oxide film at the device operating temperature, three The TDDB lifetime at different voltages at a given temperature is then estimated using the model (E-model or 1 / E model) and the three lifetimes for the lifetime of the oxide film at the device operating temperature. More commonly, the E-model is used. In order to guarantee the accuracy of the lifetime deduced using the E-model, it is imperative to use the lifetime at the lower voltage as much as possible to predict the desired lifetime.Obviously, in order to obtain the TDDB lifetime at low voltage, it has to take quite a long time to test (even 1 Month), which is unacceptable for the real-time monitoring of the process.This paper presents a new method to calculate the TDDB lifetime of the gate oxide film.With this method, the TDDB lifetime of the gate oxide film can be quickly and accurately obtained, Spent less than the normal method of testing time 1 / 1000000. In this method, the clever use of the 1 / E model and E model.