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采用脉冲准分子激光工艺在Ｓｉ（１００）单晶基片上，成功地淀积了ＢＩＴ、ＰＺＴ／ＢＩＴ和ＢＩＴ／ＰＺＴ／ＢＩＴ等多层结构的铁电薄膜。通过测量金属／ＢＩＴ／ＰＺＴ／ＢＩＴ／Ｓｉ多层结构的非回线型Ｃ－Ｖ特性曲线、电容与保持时间的关系，发现三层ＢＩＴ／ＰＺＴ／ＢＩＴ薄膜具有很好的电容保持特性，是铁电场效应晶体管的理想栅极材料
A series of ferroelectric thin films of BIT, PZT / BIT and BIT / PZT / BIT were successfully deposited on Si (100) single crystal substrate by pulsed excimer laser. The three-layer BIT / PZT / BIT thin-film was found to have a good capacitance-holding property by measuring the non-linear C-V characteristic curve of the metal / BIT / PZT / BIT / Si multilayer structure and the relation between the capacitance and the holding time Ideal gate material for ferroelectric field effect transistors