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结合Si基n+-p-n-n+外延平面双极晶体管,通过分析器件内部的温度分布变化以及电流密度和烧毁时间随信号幅值的变化关系,研究了其在三角波信号、正弦波信号和方波脉冲信号等三种样式的高功率微波信号作用下的损伤效应和机理.研究表明,三种高功率微波信号注入下器件的损伤部位都是发射结,在频率和信号幅值相同的情况下方波脉冲信号更容易使器件损伤;位移电流密度和烧毁时间随信号幅值的增大而增大,而位移电流在总电流所占的比例随信号幅值的增大而减小;相比于因信号变化率而引起的位移电流,信号注入功率在高幅值信号注入损伤过程中占主要作用.利用数据分析软件,分别得到了三种信号作用下器件烧毁时间和信号频率的变化关系式.结果表明,器件烧毁时间随信号频率的增加而增加,烧毁时间和频率都符合t=afb的关系式.
Based on the change of temperature distribution and the relationship between the current density and the burnout time with the signal amplitude, the effects of the triangular wave signal, the sine wave signal and the square wave pulse on the Si-based n + -pn-n + epitaxial planar bipolar transistor are analyzed. Signal and other three types of high-power microwave signals under the effect of damage and mechanism.Research shows that three kinds of high-power microwave signal into the device under the injury part is a launch junction, the same frequency and signal amplitude in the case of square wave pulse The signal is more likely to damage the device; displacement current density and burn-in time increases with the increase of signal amplitude, and the proportion of displacement current in the total current decreases with the increase of signal amplitude; The rate of change caused by the displacement current, the signal injection power in high amplitude signal injection damage plays a major role in the use of data analysis software, respectively, were three kinds of signal under the device burnout time and signal frequency change relationship.The results show , Device burn time increases with the increase of signal frequency, burn time and frequency are in line with t = afb relationship.