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利用离子注入的方法在Si（111）衬底上制备出了具有六方结构的稀土硅化物YSi2埋层,并对其进行了结构及电学特性的研究.钇注入剂量为1×1018Y+cm-2,注入能量为100keV.利用X射线衍射（XRD）及卢瑟福背散射技术（RBS）得到了注入样品的结构相.结果显示,在对衬底Si进行Y离子注入的过程中就已经形成了YSi2相,在随后的红外光辐照退火过程中,样品呈现出了取向生长的趋势.利用RBS的测量分析了注入层中的Y离子在样品不同深度处的浓度分布.利用四探针法对刚注入的样品进行了红外光辐照过程中的原位方块电阻测量,结果显示,当退火温度升到160℃时,样品中形成了斜方的YSi亚稳相;而240℃则对应着YSi-YSi2的相转变点。
YSi2 buried layer with hexagonal structure was prepared on Si (111) substrate by ion implantation, and its structure and electrical properties were studied. The dose of yttrium implantation was 1 × 1018Y + cm-2 , And the energy of implantation is 100 keV.The structure of the implanted samples was obtained by X-ray diffraction (XRD) and Rutherford backscattering (RBS) technique.The results show that during the Y ion implantation into the substrate Si, YSi2 phase, the samples showed the tendency of orientation growth during the subsequent IR irradiation annealing.Using the RBS measurement, the concentration distribution of Y ions in the injection layer at different depths of the samples was analyzed.The four probes The in-situ square resistance measurements of the samples just infused during IR irradiation showed that the as-splayed YSi metastable phase was formed in the samples when the annealing temperature was raised to 160 ℃, while the YSi metastable phase at 240 ℃ corresponded to YSi -YSi2 phase transition point.