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用二维器件仿真软件MEDICI模拟分析了N型槽栅金属 氧化物 半导体场效应晶体管的热载流子特性及其对器件性能所造成的损伤 ,并与相应常规平面器件进行了比较 ,同时用器件内部物理量的分布对造成两种结构器件特性不同的原因进行了解释 .结果表明槽栅器件对热载流子效应有明显的抑制作用 ,但槽栅器件对热载流子损伤的反应较平面器件敏感 .
Using the two-dimensional device simulation software MEDICI, the hot carrier characteristics and the damage to the device performance of N-type trench gate MOSFETs were analyzed and compared with the corresponding conventional planar devices. At the same time, The distribution of the internal physical quantities explains the reasons that cause the different characteristics of the two devices.The results show that the trench gate devices significantly inhibit the hot carrier effect, but the response of the gate-to-gate devices to hot carrier damage is more stable than that of the planar devices Sensitive.