论文部分内容阅读
介绍了一种不含腐蚀抑制剂苯并三氮唑(BTA)和氧化剂的弱碱性阻挡层抛光液。通过测量抛光液的pH值、Zeta电位、黏度、粒径大小及粒径分布随放置时间的变化来研究抛光液的稳定性;该抛光液与商业阻挡层抛光液进行比较,通过测试抛光后的晶圆表面状态,发现该抛光液有利于化学机械抛光(CMP)后清洗;在E460E机台上研究抛光液中各种成分(磨料、FA/O螯合剂)和抛光液pH值对Cu,Ta和SiO2去除速率选择比的影响。实验研究结果表明该弱碱性阻挡层抛光液使用保质期长达一个月以上并且利于CMP后清洗,抛光后的晶圆表面无氧化铜结晶和BTA颗粒。抛光实验结果显示磨料、FA/O螯合剂和pH值对Cu,Ta和SiO2去除速率选择比有不同的影响,其中影响最大的是磨料质量分数。
A weak alkaline barrier polishing solution containing no benzotriazole (BTA) and oxidant is introduced. The stability of the polishing solution was investigated by measuring the pH, Zeta potential, viscosity, particle size, and particle size distribution of the polishing solution as a function of placement time. The polishing solution was compared to the commercial barrier slurry and tested for polishing The surface condition of the wafer was found to be favorable for cleaning after chemical mechanical polishing (CMP). The effects of various components (abrasive, FA / O chelating agent) And SiO2 removal rate selectivity. Experimental results show that the weak alkaline barrier slurry used for more than one month shelf life and cleaning after cleaning, polished wafer surface without copper oxide crystals and BTA particles. The results of the polishing experiments show that the choice of abrasive, FA / O chelating agent and pH have different effects on the Cu, Ta and SiO2 removal rate selectivity. The most important one is the abrasive mass fraction.