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通过研究６０Ｃｏγ射线对ＭＯＳＦＥＴ的线性特性和输出特性的影响，定性地描述了氧化物电荷积累和Ｓｉ／ＳｉＯ２界面态增加分别与Ｐ－ＭＯＳＦＥＴ和Ｎ－ＭＯＳＦＥＴ的迁移率μ退化、跨导ｇｍ下降以及输出特性曲线漂移等的依赖关系。试验结果表明，对于Ｐ－ＭＯＳＦＥＴ，电离辐照感生氧化物电荷积累和界面态密度增加都将导致器件模拟特性的退化；对于Ｎ－ＭＯＳＦＥＴ，这种退化主要由辐射感生Ｓｉ／ＳｉＯ２界面态密度增加所支配。
By investigating the influence of 60Coγ-ray on the linearity and output characteristics of the MOSFET, the charge-deoxidation and the increase of the Si / SiO2 interfacial states of the MOSFET are qualitatively described. Output characteristic curve drift and other dependencies. The experimental results show that for the P-MOSFET, charge-induced ionization of the ionizing radiation and the increase of the interface state density will lead to the degradation of the device’s analog characteristics. For the N-MOSFET, the degradation is mainly caused by the radiation-induced Si / SiO2 interface state Dominated by increased density.