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系统研究在空气气氛下热处理温度对真空蒸发法制备Au/CdZnTe电极接触特性的影响。结果表明,在353~373K温度范围内进行热处理可以获得更优化的电极接触性能,测试得到电极与CdZnTe接触势垒较低,接触电阻较小,欧姆系数最佳,并且不会破坏CdZnTe体材料本身的性能。而当热处理温度高于400K时,Au电极沉积表面形貌明显变差,CdZnTe样品的漏电流大幅增加。这可能是由于随着热处理温度的增加,CdZnTe体材料表面的Cd升华加剧,产生大量的Cd空位引起的。
The effect of heat treatment temperature on the contact characteristics of Au / CdZnTe electrode prepared by vacuum evaporation was investigated systematically. The results show that the optimum electrode contact performance can be obtained by heat treatment in the temperature range of 353 ~ 373K. The results show that the contact barrier of CdZnTe electrode is lower, the contact resistance is lower, the ohmic coefficient is the best, and the CdZnTe material itself is not destroyed Performance. When the heat treatment temperature is higher than 400K, Au electrode deposition surface morphology significantly worse, CdZnTe sample leakage current increased significantly. This may be attributed to the increase of Cd sublimation on the surface of CdZnTe material with the increase of heat treatment temperature, resulting in a large amount of Cd vacancies.