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介绍了一种采用p-i-n开关设计的单路选通开关矩阵。通过合理设计p-i-n二极管的直流反偏电压,解决了p-i-n开关矩阵承受功率的设计问题;采用宽带锥形电感和空心电感相结合的电路形式,设计了一种宽带的偏置电路;优化了开关矩阵电路的设计,简化了电路结构形式,提高了开关矩阵的微波性能和可生产性。设计实现了一种超宽带单路选通开关矩阵,工作频率为1～18 GHz,插入损耗(IL)<5 dB,端口隔离(Isolation)>35 dB。验证结果表明,理论仿真结果与实验测试结果基本一致,证明了设计方法的可行性。
A single gated switch matrix with p-i-n switch design is introduced. By designing the DC bias voltage of pin diode reasonably, the design problem of the power of pin switch matrix is solved. A broadband bias circuit is designed by the combination of wideband taper inductor and hollow inductor. The switching matrix is optimized The circuit design simplifies the circuit structure and improves the microwave performance and manufacturability of the switch matrix. An ultra-wideband single gated switch matrix is designed and implemented with operating frequencies from 1 to 18 GHz with <5 dB insertion loss (IL) and> 35 dB port isolation (Isolation). The verification results show that the theoretical simulation results are basically consistent with the experimental test results, which proves the feasibility of the design method.