论文部分内容阅读
本文叙述了DMOS器件和DMOS E/D电路的结构和特点。提出了硅栅自对准等平面DMOS E/D电路的工艺方案,并给出了工艺参数。用这种方案在p型高阻<111>硅片上制造了E/D电路中常用的四种器件:增强型DMOS驱动管、耗尽NMOS负载管,双向DMOS传输门管及栅保护管。其中DMOS管是采用双扩散方法和普通的光刻技术制得的具有亚微米有效沟道长度的短沟道器件。电学参数测试表明,DMOS器件具有高增益因子、无穿通效应、小的漏结电容等优点。对9级环形振荡器测量的结果为:每级门的传播延迟时间为6.5～7.5毫微秒,最小功耗为8.4微瓦,功率延迟积为0.058微微焦耳。
This article describes the DMOS device and DMOS E / D circuit structure and characteristics. Proposed a silicon gate self-aligned planar DMOS E / D circuit process options, and gives the process parameters. With this solution, four devices commonly used in E / D circuits are fabricated on p-type high resistance <111> silicon: an enhanced DMOS driver, an NMOS depleted load tube, a bidirectional DMOS transfer gate, and a gate guard. The DMOS tube is a short channel device with an effective channel length of submicrometer, which is made by double diffusion method and ordinary lithography. The test of electrical parameters shows that the DMOS device has the advantages of high gain factor, no punch-through effect and small leakage capacitance. The results for the 9-stage ring oscillator were: propagation delays of 6.5-7.5 ns per stage, a minimum power consumption of 8.4 μW, and a power delay product of 0.058 μJ.