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一、前言 利用非晶态薄膜制做敏感元件用于传感器或制做精密电阻器用于微电子线路,具有电阻率大、电阻温度系数低、抗腐蚀、耐磨、体积小和一体化等优点。非晶态材料的稳定性是此材料技术应用上所需解决的问题之一。从对Ni-Si-B非晶薄膜的研制和测试中发现,薄膜的物理性质及稳定性除与溅射条件,退火处理有关外,还与薄膜的厚度有关。一定厚度范围的薄膜有最小的电阻温度系数(TCR)和最好的稳定性。从薄膜结构驰豫激活能的测定中也得到一定厚度范围的薄膜对应较大的激活能(E_a)。
I. Preface The use of non-crystalline film sensors for the manufacture or manufacture of precision resistors for microelectronics circuits, with large resistivity, low temperature coefficient of resistance, corrosion resistance, wear resistance, small size and integration advantages. The stability of amorphous materials is one of the problems to be solved in the application of this material technology. From the Ni-Si-B amorphous film research and testing found that the physical properties and stability of the film in addition to the sputtering conditions, annealing, but also with the thickness of the film. Films of a certain thickness range have the lowest temperature coefficient of resistance (TCR) and the best stability. From the relaxation activation energy of the film structure, a certain thickness range of the thin film corresponds to a larger activation energy (E_a).