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用射频等离子增强化学气相沉积技术(RF-PECVD)制备非晶碳化硅(a-SiC:H)和不同掺氮量的碳化硅基(a-SiCNx:H)介质薄膜.采用傅里叶红外光谱(FIRT),X射线光电子谱仪(XPS),纳米压入仪(Nano IndenterR○-XP),Agilent 4294A高精度阻抗分析仪,俄歇能谱仪(AES)和场发射高分辨透射电镜(HRTEM)表征氮掺杂对碳化硅基薄膜化学键组成、微观结构、机械性能、介电常数和阻挡铜扩散性能的影响.实验结果表明:通过控制薄膜的氮含量可实现其介电常数在3.8—5.2范围内可调.随着反应源中氨气(NH3)流量的增加,碳化硅基薄膜中Si—N和C—N化学键比例增加以及由此导致的薄膜微观结构致密化是氮掺杂显著提高碳化硅基薄膜机械性能、热稳定性和阻挡铜扩散性能的机理.
The amorphous silicon carbide (a-SiC: H) and silicon nitride-based (a-SiCNx: H) thin films with different content of nitrogen were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) (FIR), X-ray photoelectron spectroscopy (XPS), Nano Indenter R ○ -XP, Agilent 4294A High Precision Impedance Analyzer, AES and field emission high resolution transmission electron microscopy (HRTEM ) Characterization of nitrogen doping on the chemical composition, microstructure, mechanical properties, dielectric constant and barrier copper diffusion properties of silicon carbide-based films.The experimental results show that: by controlling the nitrogen content of the film can be achieved in the dielectric constant of 3.8-5.2 With the increase of ammonia (NH3) flow rate in the reaction source, the increase of the chemical bonds of Si-N and C-N in the silicon carbide-based film and the resultant densification of the film microstructure increase the nitrogen doping significantly Mechanisms of the mechanical properties, thermal stability and copper diffusion resistance of silicon carbide based films.