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Effects of NH3 rapid thermal annealing(RTA) on the interface and electrical properties of Gd-doped HfO2(GDH)/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower(3.9×10-4A/cm2).The effective permittivity extracted from the C-V curves was～14.1 and ～13.1 for samples without and with RTA,respectively.
Effects of NH3 rapid thermal annealing (RTA) on the interface and electrical properties of Gd-doped HfO2 (GDH) / Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH / Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt / GDH / p-Si MOS capacitor without RTA was 2 × 10-3 A / cm2.After NH3 annealing, the leakage current density was about one order of magnitude lower (3.9 × 10 -4 A / cm 2). The effective permittivity extracted from the CV curves was ~ 14.1 and ~ 13.1 for samples without and with RTA, respectively.