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在经HP酸处理后的Si(100)衬底上作了低温(900℃)外延。用常规的低压化学汽相淀积(LPCVD)系统作Si的淀积。经HF酸浸泡之后,外延层的堆垛层错密度(SFD)随去离子水漂洗时间的延续而猛烈增加。对HF酸处理后的氧,氟以及碳杂质用X射线光电子光谱技术进行了测量。残余碳的化学键形态与HF酸的浓度相关。在5％的HF酸处理(相当于优化外延条件)后,大多以C-O键形态存在。
Low-temperature (900 ℃) epitaxy was performed on the Si acid-treated Si (100) substrate. The deposition of Si was performed using a conventional low pressure chemical vapor deposition (LPCVD) system. After HF acid soaking, the stacking fault density (SFD) of the epitaxial layer increases drastically with the extension of the deionized water rinsing time. The HF acid-treated oxygen, fluorine, and carbon impurities were measured by X-ray photoelectron spectroscopy. Residual carbon chemical bond morphology and HF acid concentration related. After 5% HF acid treatment (equivalent to optimizing the epitaxial conditions), most of them exist as C-O bonds.