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使用 MOCVD技术在 Al2 O3衬底上生长了 Ga N∶ Mg薄膜 .通过对退火后样品的光电性能综合分析 ,研究了掺 Mg量对生长 P型 Ga N的影响 .结果表明 :要获得高空穴载流子浓度的 P型 Ga N,Mg的掺杂量必须控制好 .掺 Mg量较小时 ,Ga N∶ Mg单晶膜呈现 N型导电 ,得不到 P型层 ;掺 Mg量过大时 ,会形成与 Mg有关的深施主 ,由于深施主的补偿作用 ,得不到高空穴浓度的 P型 Ga N.生长 P型 Ga N的最佳 Cp2 Mg/TMGa之比在 1 /660— 1 /330之间
GaN: Mg films were grown on Al 2 O 3 substrate by MOCVD technique.The effects of Mg doping amount on the growth of P-type Ga N were studied by comprehensive analysis of the optical and electrical properties of the annealed samples.The results show that: The doping concentration of P-type Ga N and Mg ions must be controlled well.When the amount of Mg doping is small, the Ga N:Mg single crystal film presents N-type conductivity and no P-type layer is obtained.When the Mg content is too large, A deep donor associated with Mg is formed and no p-type Ga with a high hole concentration can be obtained due to the deep donor compensation effect. The optimum Cp2Mg / TMGa ratio for growing P-type GaN is in the range of 1 / 660-1 / 330 between