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3.10光刻将光刻技术向更小尺寸发展一直都很困难,今年也不例外。半导体行业需要在2012年年底之前为22 nm半节距DRAM和16 nm半节距闪存选择一种光刻方法,但目前为止仍没有明确的选择。氟化氩(ArF)浸入光刻技术并不能在40 nm及更小的半节距尺度有多大发展,而且使用二次图形的氟化氩浸入技术也不能满足这些节距的要求。下一步的发展可能要依靠三次甚至四次曝光,EUV光刻,或者其
3.10 Photolithography It has always been difficult to develop lithography to smaller dimensions, and this year is no exception. The semiconductor industry needs to choose a lithography method for 22 nm half-pitch DRAM and 16 nm half-pitch flash memory by the end of 2012, but so far no definitive choice has been made. Argon (ArF) immersion lithography does not allow much progress at half-pitch of 40 nm and smaller, and the use of the second pattern of argon-argon infiltration does not meet these pitches. The next development may depend on three or even four exposures, EUV lithography, or its