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本文对一款16Mb并口型磁随机存储器(MRAM)进行了C_o60总剂量辐照和室温退火实验,深入研究了磁随机存储器的总剂量效应和退火特性。基于Verigy 93000芯片自动测试设备测试了磁随机存储器的直流/交流参数和功能,从中筛选出总剂量敏感参数,并根据敏感参数随总剂量及退火时间的变化趋势,深入分析了磁随机存储器总剂量效应的物理机制。研究表明辐照在器件浅槽隔离(STI)氧化物结构中产生的大量陷阱电荷,是导致芯片电参数失效的主要因素。总剂量辐照过程中产生的大量氧化物陷阱电荷在室温下发生退火效应,使得芯片的电参数和功能得到恢复。本文的实验数据和理论分析有助于国产宇航级磁存储器的研制开发。
In this paper, a 16Mb parallel magnetic random access memory (MRAM) C60 total dose irradiation and room temperature annealing experiments, in-depth study of the magnetic random access memory total dose effect and annealing characteristics. Based on the Verigy 93000 chip automatic test equipment, the DC / AC parameters and functions of the magnetic random access memory were tested, and the total dose sensitive parameters were screened out. Based on the trend of the sensitive parameters with the total dose and the annealing time, the total dose of the magnetic random access memory The physical mechanism of effect. Studies have shown that the large amount of trapped charge generated in the device STI oxide structure is the main factor in the failure of the electrical parameters of the chip. A large number of oxide trap charges generated during the total dose irradiation anneal at room temperature, allowing the chip’s electrical parameters and functions to be restored. The experimental data and theoretical analysis of this paper contribute to the research and development of China-made aerospace grade magnetic memory.