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介绍了横向PIN二极管及其在硅基等离子天线方面的应用,用一维理论分析了载流子大注入情况下横向PIN二极管本征区载流子浓度分布。对横向PIN二极管进行了物理建模,仿真分析了本征区长度、二氧化硅埋层、电极长度、结区掺杂浓度及表面电荷对横向PIN二极管本征区载流子浓度的影响,总结了横向PIN二极管的一般设计规则。
The application of lateral PIN diode and its application in silicon-based plasma antenna is introduced. The carrier density distribution in the intrinsic region of horizontal PIN diode is analyzed with one-dimensional theory. The lateral PIN diode is modeled physically and the effects of the length of intrinsic region, buried layer of the buried oxide, the length of the electrode, the doping concentration of the junction region and the surface charge on the carrier concentration of the PIN diode in the intrinsic region are analyzed. The general design rules for lateral PIN diodes.