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采用提拉法生长出了Yb:YxLu1-xVO4混合晶体,XRD测试发现该晶体具有四方Zr Si O4结构,经计算晶胞常数为a=b=0.7126(2)nm,c=0.6259(7)nm。利用化学腐蚀法和同步辐射X射线形貌术,分析了晶体中的缺陷,发现位错和小角度晶界是晶体中的两种主要缺陷。利用Read-Shockley公式计算分析了晶体中的转向小角度晶界,发现Yb:YxLu1-xVO4晶体中存在伯格斯矢量为[100]的位错。分析了晶体中位错和小角度晶界的形成原因,认为晶体生长和退火过程中的温度波动容易在Yb:YxLu1-xVO4晶体内部引起局部晶格畸变,诱发位错和小角度晶界的产生,因此混合晶体生长过程需要更精确控制。
Yb: YxLu1-xVO4 mixed crystals were grown by the Czochralski method. The XRD results show that the crystal has a tetragonal ZrSiO4 structure. The calculated unit cell constants are a = b = 0.7126 (2) nm and c = 0.6259 . Using chemical etching and synchrotron radiation X-ray topography, the defects in the crystal were analyzed and it was found that the dislocations and the small-angle grain boundaries are the two main defects in the crystal. By using the Read-Shockley formula, we analyze the small-angle grain boundaries of steels in the Yb: YxLu1-xVO4 crystal and find that there is a dislocation with a Burgers vector of [100] in the Yb: YxLu1-xVO4 crystal. The reasons for the formation of dislocations and small-angle grain boundaries are analyzed. It is considered that the temperature fluctuations during crystal growth and annealing easily lead to local lattice distortion, induced dislocation and small-angle grain boundaries in the Yb: YxLu1-xVO4 crystal , The mixed crystal growth process needs more precise control.