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利用ＤＳＣ方法研究了纯铝薄膜中的小丘现象，同时制备了Ａｌ双层栅电极Ｔａ／Ａｌ、Ｃｒ／Ａｌ和Ｍｏ／Ａｌ薄膜，并在不同温度下进行了退火处理，研究了双层结构中上层金属（Ｔａ、Ｃｒ和Ｍｏ）厚度对Ａｌ薄膜中小丘的抑制作用。实验结果表明，上层Ｔａ膜厚度在８０～９０ｎｍ左右（在本实验条件下）时，可得到表面无小丘的Ｔａ／Ａｌ薄膜栅材料。实验制备的表面无小丘 Ｔａ／Ａｌ、 Ｃｒ／Ａｌ和 Ｍｏ／Ａｌ等栅电极材料的电阻率均在 ７～２０μΩ·ｃｍ之间，基本满足现今对角线为 ２５～５１ｃｍ（１０～２０ｉｎ）大屏幕、高清晰度ＴＦＴ ＬＣＤ要求。
The phenomenon of hillocks in the pure aluminum thin film was investigated by DSC. At the same time, the Al double-layered gate electrodes Ta / Al, Cr / Al and Mo / Al films were prepared and annealed at different temperatures. Inhibition of mid-upper metal (Ta, Cr and Mo) thickness on the mid-small hills of Al films. The experimental results show that when the thickness of the upper Ta film is about 80 ~ 90nm (under the experimental conditions), the Ta / Al film gate material with no hillock can be obtained. The experimental results show that the resistivity of the gate electrode material without hillocks such as Ta / Al, Cr / Al and Mo / Al is between 7-20μΩ · cm, which basically satisfies the current diagonal of 25 ~ 51cm (10 ~ 20in) Large screen, high-definition TFT LCD requirements.