论文部分内容阅读
利用兰宝石衬底上外延硅膜(SOS)制作互补MOS 集成电路具有许多潜在的优点,除了高集成度、高速、低功耗、工作电压范围宽、抗闩锁和设计灵活外,这种介质隔离的集成电路在抗核加固方面的应用,其特点更为突出.尽管CMOS/SOS 与CMOS/体硅相比也还有一些缺点,如寄生的边缘漏电、背沟道漏电、衬底浮置引起的N 沟MOS 器件的“扭曲”(kink)效应、电荷存储效应、势垒高度调制等,但是,这些问题,随着工艺技术的发展都已经有效地得到了抑制或克服.目前.CMOS/SOS 工艺技术方面的突破.巳使适用于空间环境的器件与电路能够承受住多种类型的破坏性辐照.因此,辐照加固的CMOS 是适于空间环境应用的一种理想的工艺技术.
The use of epitaxial silicon films (SOSs) on sapphire substrates for complementary MOS integrated circuits offers many potential advantages. In addition to high integration, high speed, low power consumption, wide operating voltage range, and resistance to latch-up and design flexibility, such media Isolation of integrated circuits in the anti-nuclear reinforcement applications, the more prominent features.Although CMOS / SOS and CMOS / bulk silicon compared to there are some disadvantages, such as parasitic marginal leakage, back-channel leakage, the substrate floating However, these problems, with the development of technology have been effectively suppressed or overcome.Currently, the CMOS / Breakthroughs in SOS process technology have made devices and circuits suitable for space environments capable of withstanding many types of destructive irradiations, so radiation-enhanced CMOS is an ideal process technology for space environment applications.