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基于抗辐照加固0.35μmPDSOI CMOS工艺制作了RF NMOS器件,研究了电离总剂量辐照对不同体接触结构、栅结构器件性能的影响。在其静态工作模式下,分别考虑了辐照对器件转移特性、泄漏电流、跨导及输出特性的影响;在其交流工作模式下,分别考虑了辐照对其交流小信号电流增益、最大有效/稳定增益、截止频率和最高震荡频率的影响。试验结果表明,与同类非加固工艺器件相比,此种PDSOI RF NMOS抗辐照性能更好,其中以LBBC和LTS型体接触器件受电离总剂量辐照影响最小,并且可获得截止频率22.39 GHz和最高振荡频率29.19 GHz。
The RF NMOS device was fabricated based on 0.35μm PDSOI CMOS with anti-radiation reinforcement. The effects of the total ionizing dose irradiation on the contact properties of different bodies and the performance of gate structure devices were studied. Under the static operation mode, the effects of radiation on the transfer characteristics, leakage current, transconductance and output characteristics of the device are respectively considered. In the AC mode, the gain of the AC small signal current is considered separately and the maximum effective / Stable Gain, Cutoff Frequency, and Highest Oscillatory Frequency. The experimental results show that the PDSOI RF NMOS has better anti-radiation performance than other non-reinforced process devices, and LBBC and LTS type contact devices have the least influence on ionizing total dose irradiation, and the cutoff frequency of 22.39 GHz And the maximum oscillation frequency of 29.19 GHz.