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在介绍EUV光刻原理和EUV光源基本概念的基础上,讨论了目前研究得最多、技术最成熟的激光产生的等离子体LPP光源,着重对EUV光源的初步应用和EUV光刻设备的开发进展情况进行了详细介绍与讨论。目前的研究进展表明,随着激光产生的等离子体EUV光源(LPP)功率的不断提高和EUV光刻设备的逐步成熟,极紫外(EUV)光刻技术将在2012年步入半导体产业的商业化生产。
Based on the introduction of the basic principles of EUV lithography and EUV light source, the plasma LPP light source produced by the laser, which has the most research and the most mature technology, is discussed. The preliminary application of EUV light source and the development of EUV lithography equipment are also discussed Carried out a detailed introduction and discussion. The current research progress shows that EUV lithography will enter the commercialization of the semiconductor industry in 2012 with the continuous improvement of the laser power of the plasma EUV light source (LPP) and the gradual maturation of the EUV lithography equipment produce.