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We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nbdoped TiO_2(TNO).The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 ℃.Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen.With H_2-annealing,both carrier density and Hall mobility recovered to the level of conducting TNO,demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers.
We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nbdoped TiO_2 (TNO). Insulating mono-oxide films TNO films were intentionally fabricated by annealed TNO films in oxygen ambient at 400 ℃. compensation due to excess oxygen.With H_2-annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers.