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为了实现高质量刻蚀阻挡型InGaZnO薄膜晶体管(IGZOTFT)器件,研究了IGZO TFT关键制备工艺,其中重点探讨了IGZO成膜氧分压、退火工艺、IGZO成膜均一性对于IGZO TFT电学特性的影响。通过优化成膜和退火工艺在G6玻璃基板上制作的IGZOTFT器件,阈值电压0.72 V,亚阈值摆幅0.2 V/dec,迁移率9.57 cm~2/V·s,Ion/Ioff>10~8,IGZO TFT大基板阈值电压均一性最大偏差小于2 V。最后进行了IGZO TFT长期稳定性测试以及正负偏压应力测试,结果表明IGZO TFT器件经过长时间空气暴露会导致特性劣化,负向偏压应力劣化较为明显。所制备的刻蚀阻挡型IGZO TFT器件可以满足高质量液晶显示的要求。
In order to realize high quality etching barrier InGaZnO thin film transistor (IGZOTFT) devices, the key preparation technology of IGZO TFT was studied, and the influence of oxygen partial pressure, annealing process and homogeneity of IGZO film on the electrical characteristics of IGZO TFT was discussed. . The IGZOTFT device fabricated on the G6 glass substrate by optimized film formation and annealing process has a threshold voltage of 0.72 V, a subthreshold swing of 0.2 V / dec, a mobility of 9.57 cm 2 / V · s and an Ion / Ioff of 10 ~ 8. IGZO TFT large substrate threshold voltage uniformity maximum deviation of less than 2V. Finally, IGZO TFT’s long-term stability test and positive and negative bias stress tests were carried out. The results show that the IGZO TFT devices exposed to air for a long time will lead to deterioration of characteristics and deterioration of negative bias voltage. The prepared etch-stop IGZO TFT device can meet the requirements of high-quality liquid crystal display.