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对于厚铝芯片的制造工艺,由于光刻对准标记上覆盖了厚的铝层,对准标记形貌轮廓会变得模糊,这会导致光刻对准出现困难,对偏的问题将变得常见。为了解决此问题,提出了多种改善方法,首先采用叠加标记法,通过将不同层次的对准标记进行叠加,增大了标记的台阶,对准标记的轮廓变得比原来清晰。其次是局部溅射法,通过夹具保护对准标记,确保标记不被厚铝覆盖,因此厚铝将不会对对准标记产生任何影响。最后是剥离工艺法,通过光刻胶保护对准标记,使之不被厚铝覆盖,因此,对准标记形貌将会保持清晰。这些方法在工艺和原理上是不同的,它们适用于不同的环境。通过这些方法,基本可以解决厚铝工艺中光刻对准困难的问题。
As for the manufacturing process of the thick aluminum chip, since the alignment mark of the photolithography is covered with a thick aluminum layer, the outline of the alignment mark becomes blurred, which leads to difficulties in alignment of the photolithography and the problem of bias will become common. In order to solve this problem, a variety of improvement methods are proposed. First, the superposition mark method is adopted. By stacking the alignment marks at different levels, the step of the mark is increased, and the outline of the alignment mark becomes clear than the original. Second is the local sputtering method, which protects the alignment mark by the jig to ensure that the mark is not covered by the thick aluminum so thick aluminum will not have any effect on the alignment mark. Finally, the lift-off process is used to protect the alignment mark by a photoresist so that it is not covered by thick aluminum, so the alignment mark topography will remain clear. These methods are different in process and principle, and they are suitable for different environments. Through these methods, the basic problems of the alignment of the thick aluminum in the lithography can be solved.