单晶硅目前是电子工业中最重要的材料。尽管已经知道用直拉法(SZ法)生长的硅单晶的某些特性——例如旋涡缺陷——与熔体流动情况有密切关系,因而迫切要求了解它的熔体流动图,但由于硅熔体是强腐蚀剂,关于它的流体行为的物理测量很困难,精确地获得硅熔体流动图目前尚不可能。近年来,国外一些学者引用流体动力学对 CZ 法硅熔体做了很多理论估计。在这个 Monocrystalline silicon is currently the most important material in the electronics industry. Although it is known that certain properties of a silicon single crystal grown by the Czochralski method (SZ method), such as a vortex defect, are closely related to melt flow conditions, it is urgent to know its melt flow pattern, but since silicon The melt is a strong corrosive and physical measurements of its fluid behavior are difficult. It is currently not possible to obtain a precise flow diagram of the silicon melt. In recent years, some foreign scholars have made a lot of theoretical estimates on the CZ method of silicon melt by reference to fluid dynamics. at this