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分别论述了曝光照明配合和隔离工艺产生的场内套准误差。在当前的光学工艺中 ,变形照明技术 (如环形照明、四极照明及小σ孔径照明技术 )被广泛用来拓展光学光刻的实用极限。同时 ,由于每种照明条件具有不同的光学特性 ,可使场内套准变差。CMOS器件制造中隔离工艺也被视为产生场内套准误差的关键步骤 ,来自热循环和各种类型膜的圆片应力可诱发这种误差。并研究了照明条件配合、隔离模式、场氧化温度、厚度等的效应。通过曝光场比例值进行场内套准误差补偿。
Discusses separately the field exposure error caused by exposure illumination and isolation process. In the current optical arts, deformable lighting technologies such as toroidal lighting, quadrupole lighting and small-sigma-aperture lighting are widely used to expand the practical limits of optical lithography. At the same time, in-field registration can deteriorate due to the different optical properties of each lighting condition. Isolation processes in the fabrication of CMOS devices are also seen as a key step in creating in-field registration errors that can be induced by thermal cycling and wafer stress from various types of films. And studied the lighting conditions with the isolation mode, field oxidation temperature, thickness and other effects. Field exposure error compensation by exposure field ratio value.