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利用φ550型AES和ESCA与离子溅射相结合方法,研究了n型InP(100)晶面,浓度 10~(16)cm~(-3),迁移率约 2500cm~2/V·s的单晶片上低温淀积SiO_2热氧化膜和阳极氧化膜与本体InP界面区的光电子能谱随深度的变化,及其各种氧化物和俄歇信号的深度分布.在深度分析中Ar作溅射气体,离子枪工作电压为2keV,离子流密度为8μA,电子束电压为3keV,其束流为5μA.同时用椭圆偏振光测厚仪,测定了两种氧化膜的厚度和折射率及介电常数,并且还测定了它们的击穿电压,其结果列于表1.
The combination of φ550 type AES and ESCA with ion sputtering was applied to study the growth of n type InP (100) crystal plane with a concentration of 10 ~ (16) cm ~ (-3) and a mobility of about 2500cm ~ 2 / V · s The photoelectron spectrum of the low temperature deposited SiO_2 thermal oxide film and the InP interface of the anodic oxide film with the bulk changes along with the depth and the depth distribution of various oxides and Auger signals.In the depth analysis, Ar sputtered gas , The ion gun working voltage is 2keV, ion current density is 8μA, electron beam voltage is 3keV, and its beam current is 5μA. At the same time, the thickness and refractive index and dielectric constant , And their breakdown voltage was also measured, the results of which are shown in Table 1.