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应用微波等离子体化学气相沉积方法 ,在单晶Si(10 0 )衬底上生长出SiC纳米线 .应用扫描电子显微镜、透射电子显微镜、能量损失谱 (EDS)和选区电子衍射 (SAD)等方法对纳米线化学组成和结构进行了分析和表征 .给出该纳米线的生长机理
SiC nanowires were grown on a single-crystal Si (100) substrate by microwave plasma chemical vapor deposition method.Using scanning electron microscopy, transmission electron microscopy, energy loss spectroscopy (EDS) and selected area electron diffraction (SAD) The chemical composition and structure of nanowires were analyzed and characterized. The growth mechanism of nanowires