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用DLTS和单次脉冲瞬态电容技术研究了液相外延生长的双异质结Al_xGa_(1-x)As/GaAs发光管,掺Si的n-Al_(0.05)Ga_(0.95)As有源层中的深能级。着重分析了一个与氧有关的电子陷阱,其发射激活能为E_C-E_D=0.29eV。我们发现该电子陷阱随正向注入脉冲宽度tp的增加DLTS峰向低温移动,即在确定的温度下发射率随tp的增加而增加。用DLTS首次测得该能级的俘获瞬态谱,发现俘获峰随反向撤空脉冲宽度t_R的增加向低温端移动,即在确定的温度下俘获率随t_R的增加而增加,并且俘获激活能从△_E_σ=0.28eV变化到0.26eV,用位形坐标图讨论了引起变化的原因。
The double heterojunction Al_xGa_ (1-x) As / GaAs LED with liquid-phase epitaxial growth and the n-Al_ (0.05) Ga_ (0.95) As active layer doped with Si were investigated by DLTS and single pulse transient capacitance In the deep level. An oxygen-related electron trap is emphatically analyzed. Its emission activation energy is E_C-E_D = 0.29eV. We find that the electron traps move with the increase of the implanted pulse width tp in the positive direction to the low temperature, ie, the emissivity increases with increasing tp at a given temperature. Trapping transient spectra of this energy level were first measured with DLTS and it was found that the trapping peak moved toward the cryogenic end as the reverse evacuation pulse width t_R increased, ie the capture rate increased with increasing t_R at a defined temperature and the capture activation From ΔE_σ = 0.28eV to 0.26eV, the reason for the change is discussed in a bitmap.