论文部分内容阅读
本文通过实验和对样品上钝化层成分的分析，提出了ＣＣｌ２Ｆ２／Ｏ２混合气体对单晶硅的各向异性刻蚀机理：在一定功率下，ＣＣｌ２Ｆ２离解出大量的ＣＦｘ粒子和Ｃｌ粒子，在前者对样品的轰击下后者与轰击出的Ｓｉ原子反应生成挥发性的ＳｉＣｌ４，产生刻蚀．Ｏ２的加入一方面形成钝化层ＳｉｘＯｙＦｚ保护侧壁，另一方面通过消耗ＣＦｘ粒子减少其与Ｃｌ粒子的再结合而达到加速目的．探讨了在一定条件下压力和ＩＣＰ功率对刻蚀速率和各向异性的影响．在大量实验的基础上优化各刻蚀参数，在ＩＣＰ７９０设备上刻出了宽３μｍ，深１６μｍ的窄槽，刻蚀速率约为２００ｎｍ／ｍｉｎ．
In this paper, the anisotropic etching mechanism of single crystal silicon by CCl2F2 / O2 gas mixture is proposed through experiments and analysis of the passivation layer composition of the sample. Under a certain power, CCl2F2 dissociates a large number of CFx particles and Cl particles, The former bombardment of the sample under the reaction with the bombarded Si atoms generated volatile SiCl4, resulting in etching. The addition of O2, on the one hand, forms a passivation layer, SixOyFz, which protects the sidewalls and, on the other hand, accelerates by depleting the CFx particles by recombining them with Cl particles. The effects of pressure and ICP power on the etching rate and anisotropy under certain conditions were discussed. The etching parameters were optimized on the basis of a large number of experiments. Narrow grooves with a width of 3μm and a depth of 16μm were engraved on the ICP790 device, and the etching rate was about 200nm / min.