据《Semiconductor FPD world》2007年第10期报道,日本新日铁公司在计算机模拟技术的基础上,开发了坩锅晶体生产时可控温度分布和升华蒸气物质转移的工艺,使100mm的SiC晶圆大幅度降低微管缺陷密度,其微管分布仅为0.03个/cm2,是业界最好水平。目前,晶圆公司的微管分布密度大都为 According to “Semiconductor FPD world” 2007 the tenth period reported that Nippon Steel Corporation in the computer simulation technology based on the development of crucible crystal production temperature controllable sublimation and the process of sublimation of the vapor material transfer, the 100mm SiC crystal Round significantly reduce the density of micro-tube defects, the microtubule distribution of only 0.03 / cm2, is the best level in the industry. Currently, most of the microtubule distribution density of wafer companies