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利用脉冲YAG激光器 (脉宽为 1 0ns ,波长为 1 .0 6μm)对砷注入长波碲镉汞样品进行激光退火实验 ,分析注入退火引起的样品电学性质的变化 ,认为激光退火能够消除辐射损伤 ,并激活注入杂质。同时对电导率 迁移率谱这一实验方法也做了较详细的说明。
The laser annealing experiment of arsenic implanted long-haul mercury telluride sample with pulsed YAG laser (pulse width of 10 ns, wavelength of 1.06 μm) was performed to analyze the change of electrical properties caused by injection annealing. It is concluded that laser annealing can eliminate the radiation damage, And activate the injection of impurities. At the same time, the experimental method of conductivity mobility spectrum is also described in more detail.