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新一代发光二极管美国贝尔实验室正在研制新一代的发光二极管，其发光效率在理论上和实际上均为现有产品的５～１０倍。这种新型器件的主动区包括４个ＧａｌｎＡｓ量子阶，一层ｐ和ｎＡＩ－ＧａＡｓ膜和一个反射层，由其平面反射层构成的一维微型谐振腔其间隔为一个光学波...
A new generation of light-emitting diodes Bell Laboratories is developing a new generation of light-emitting diodes, the luminous efficiency of both theoretical and practical existing products 5 to 10 times. The active area of the novel device includes four GalnAs quantum steps, a layer of p and nAI-GaAs films and a reflection layer, and the one-dimensional ... http: