微波和电光工业的发展需要越来越薄的平面外延结构,这促进了人们对晶体生长的分子束外延技术进行深入的研究。现在,用分子束外延的方法能使基质晶体和掺杂材料的分布在生长方向上被控制到原子的精度。这样精密的控制不仅被用于研究各种新材料,而且还被用于制备各种半导体器件。本文介绍了分子束外延的过程和设备,并对一些用分子束外延生长的材料和器件作简单的评论。 The development of the microwave and electro-optic industries requires thinner and more planar epitaxial structures, which have promoted the further study of the molecular beam epitaxy technology for crystal growth. Now, the molecular beam epitaxy method enables the distribution of matrix crystals and dopant materials to be controlled to atomic precision in the growth direction. Such sophisticated control is not only used to study a variety of new materials, but also for the preparation of various semiconductor devices. This article describes the molecular beam epitaxy process and equipment, and some of the molecular beam epitaxial growth of materials and devices for a simple comment.