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本文介绍了运用辉光分解硅烷法制备a-Si:H薄膜的基本原理、设备及工艺,采用不同的工艺条件制备了一系列不同的掺杂和本征a-Si:H薄膜,对掺杂样品的电导率进行了检测.结果表明,掺杂显著地提高了材料的电导率.
In this paper, we introduce the basic principle, equipment and process of a-Si: H films prepared by glow-deactivation silane method. A series of different doped and intrinsic a-Si: H thin films were prepared by using different process conditions. The conductivity of the sample was tested.The results show that the doping significantly improves the conductivity of the material.