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实验在真空度为2×10~(-4)Pa的普通扩散泵浦高真空室中淀积MgF_2膜。当离子源工作时,这真空度降到10~(-2)Pa(充了氩气)。膜淀积在热源上方40cm处的25×12mm石英玻璃和PMMA衬底上。Kaufman型离子枪在衬底下方30cm处,与衬底法线成30°角。加了负偏压的1cm~2的离子探针用陶瓷架同蒸发物流隔开。淀积速率和膜的厚度用石英晶体控制。膜均以5A/Sec的速率淀积。参考膜不用离子束辅助法制作:一组淀积在室温衬底上,另一组淀积在加热到300℃的衬底上。用离子束
In the experiment, a MgF 2 film was deposited in an ordinary diffusion pump high vacuum chamber with a vacuum degree of 2 × 10 ~ (-4) Pa. When the ion source is working, the degree of vacuum is reduced to 10 ~ (-2) Pa (filled with argon). The film was deposited on a 25 x 12 mm quartz glass and PMMA substrate 40 cm above the heat source. Kaufman ion guns 30cm below the substrate at an angle of 30 ° to the substrate normal. A negative ion bias of 1cm ~ 2 ion probe with a ceramic rack with the vaporizer stream separated. The deposition rate and film thickness are controlled with quartz crystals. The films were deposited at a rate of 5 A / Sec. Reference films were fabricated without ion beam assisted methods: one was deposited on a room temperature substrate and the other was deposited on a substrate heated to 300 ° C. Use ion beam