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描述了混合晶向技术原理以及各种硅衬底晶向的反型层中载流子迁移率特性,分析了应变硅技术对载流子迁移率的增强机理,介绍了DSL这种应变硅技术的工艺实现方法。提出了将混合晶向技术和应变硅技术两者有机结合以提高载流子迁移率的局部化混合晶向应变硅基本思路,分析了基于该基本思路的局部化混合晶向应变硅CMOS结构及其电学性能。最后详细描述了局部化混合晶向应变硅CMOS结构工艺流程,为开发高性能、低功耗CMOS集成电路提供了一个科学合理的工艺制备方法。
The principle of mixed crystal orientation and carrier mobility in the inversion layer of various silicon substrates are described. The mechanism of the enhancement of charge carrier mobility by strained silicon technology is introduced. The strained silicon technology Method of realization of the process. The basic idea of localized mixed orientation to strained silicon that combines the hybrid orientation technology and the strained silicon technology to improve the carrier mobility is proposed. The localized mixed orientation strained silicon-based CMOS structure based on the basic idea is analyzed. Its electrical properties. Finally, a detailed description of the process flow of localized mixed-oriented strained silicon CMOS structure provides a scientific and reasonable process for the development of high performance, low power CMOS integrated circuits.