报道了一种从非晶硅薄膜中生长纳米硅晶粒的方法 .含氢非晶硅薄膜经过快速热退火处理后 ,用拉曼散射和 X射线衍射技术对样品进行分析 .实验结果表明 :纳米硅晶粒不但能在非晶硅薄膜中形成 ,而且所形成的纳米硅晶粒的大小随着热退火过程中升温快慢而变化 .在升温过程中 ,若单位时间内温度变化量较大 (～ 10 0℃ / s) ,则所形成纳米硅粒较小 (1.6～ 15 nm) ;若单位时间内温度变化量较低 (～ 1℃ / s) ,则纳米硅粒较大 (2 3～ 4 6 nm) .根据晶体生长理论和计算机模拟 ,讨论了升温快慢与所形成的纳米硅颗粒大小的关系 A method for growing nanocrystalline silicon grains from amorphous silicon films was reported.The samples were analyzed by Raman scattering and X-ray diffraction after the films containing hydrogenated amorphous silicon were annealed by rapid thermal annealing.The experimental results show that nanocrystalline Silicon crystal grains can not only be formed in the amorphous silicon thin films, but also the size of the formed nano-crystalline silicon grains changes with the temperature rising speed during the thermal annealing process.In the temperature rising process, if the temperature changes a lot in a unit time, 10 0 ℃ / s), the size of nanosized silicon particles is small (1.6-15 nm); if the temperature change is low (-1 ℃ / s) per unit time, 6 nm) .According to the crystal growth theory and computer simulation, the relationship between the temperature rising speed and the size of nano-silicon particles formed is discussed