,High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

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A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice.The saturated responsivity was achieved under low bias voltage for both channels.The device could be operated as a single detector for sequential detection and showed high quantum efficiencies.The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV,respectively.The optical performance for each channel was achieved using a 2 μm thickness absorber.Due to the high QE,the specific detectivities of the blue and red channels reached 5.0 × 101 1 cm.Hz 1/2/W at 6.8 μm and 3.1 × 1011 cm.Hz 1/2/W at 9.1 μm,respectively,at 77 K.
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