研究了生长温度和中断时间对AlGaInAs/AlGaAs量子阱外延质量的影响,并使用金属有机化合物汽相沉积(MOCVD)外延生长了AlGaInAs/AlGaAs量子阱和852nm半导体激光器。通过使用反射各向异性谱(RAS)和光致发光谱在线监测和研究了AlGaInAs/AlGaAs界面的外延质量。研究结果表明高温生长可以导致从AlGaInAs量子阱层到AlGaAs势垒层的In析出现象。通过优化生长温度和在AlGaInAs/AlGaAs界面处使用中断时间,可以有效抑制In析出,从而获得AlGaInAs/AlGaAs陡峭界面。使用优化后的外延生长条件,外延生长了整个852nm半导体激光器,使用RAS在线监测了激光器的外延生长过程,可以有效地分辨出不同外延层和生长阶段。 The effects of growth temperature and interrupting time on the epitaxial quality of AlGaInAs / AlGaAs quantum wells were investigated. AlGaInAs / AlGaAs quantum wells and 852 nm semiconductor lasers were epitaxially grown by metal organic compound vapor deposition (MOCVD). The epitaxial mass of the AlGaInAs / AlGaAs interface was monitored and investigated online by using reflection anisotropy spectroscopy (RAS) and photoluminescence spectroscopy. The results show that the high temperature growth can lead to In precipitation from the AlGaInAs quantum well layer to the AlGaAs barrier layer. By optimizing the growth temperature and using the interruption time at the AlGaInAs / AlGaAs interface, In precipitation can be effectively suppressed to obtain a steep AlGaInAs / AlGaAs interface. Using the optimized epitaxial growth conditions, the entire 852nm semiconductor laser was epitaxially grown. The RAS was used to monitor the epitaxial growth of the laser line and effectively distinguish different epitaxial layers and growth stages.