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由于半导体微环激光器(SML)具有波长转换、可调谐和光学双稳态等特点,因此成为全光逻辑和全光存储领域的研究热点。在分析背散射耦合系数与SML工作区域(双向连续波、双向交替振荡和单向双稳态)的基础上,优化设计了环形谐振腔的结构参数和工艺流程,研制出一种低阈值、直接进入单向双稳态工作的InP基微环激光器。测试结果表明,激光器的中心激射波长为1569.65 nm,阈值电流为56 mA,当驱动电流超过阈值电流后,器件可不经过双向工作区直接进入单向双稳态,降低了双稳态工作的电流和功耗,非常适合用作光随机存储器单元。
Due to its characteristics of wavelength conversion, tunable and optical bistability, semiconductor micro-ring laser (SML) has become a research hotspot in all-optical logic and all-optical storage. Based on the analysis of backscatter coupling coefficient and SML working area (bidirectional continuous wave, bidirectional alternating oscillation and unidirectional bistability), the structural parameters and process flow of the ring resonator are optimized and a low threshold is developed. Into a one-way bistable InP-based micro-ring laser. The test results show that the laser has a central lasing wavelength of 1569.65 nm and a threshold current of 56 mA. When the driving current exceeds the threshold current, the device can directly enter the unidirectional bistable without going through the bidirectional working area, reducing the current of the bistable operation And power consumption, it is very suitable for use as an optical random access memory unit.