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掺杂Yb3+离子的激光材料具有能级结构简单、抽运波长与振荡波长相近、量子效率高等优点,十分适合作为半导体激光器(LD)直接抽运的高功率激光光源。近年来,随着高性能InGaAs激光二极管的发展和成本的降低,掺Yb3+激光介质的研究受到人们的极大关注,并已研制出了许多新型激光晶体,
The doped Yb3 + ion laser has the advantages of simple energy level structure, similar pumping wavelength and oscillation wavelength and high quantum efficiency. It is very suitable as a high power laser source for direct pumping of semiconductor laser (LD). In recent years, with the development of high-performance InGaAs laser diodes and the reduction of cost, the research of Yb3 + -doped lasers has attracted much attention and many new types of laser crystals have been developed.