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利用不含氧化剂的碱性抛光液对铜和钴进行化学机械抛光,深入分析了抛光液组分包括硅溶胶磨料、FA/O螯合剂以及非离子表面活性剂对两种金属去除速率的影响规律及作用机理。实验结果表明,铜和钴的去除速率随着磨料质量分数的增加而升高,并且在磨料质量分数低于5%时钴的去除速率为20～30nm/min,而铜的去除速率几乎为零;加入FA/O螯合剂可增强其与金属离子的络合,从而加快铜和钴的去除速率;非离子表面活性剂可以有效降低铜和钴的表面粗糙度。在抛光液各组分的协同作用下,可以达到两种材料的低表面粗糙度和高去除速率选择性。
The chemical polishing of copper and cobalt was carried out by using alkaline polishing solution without oxidizing agent. The effects of polishing solution components, including silica sol abrasive, FA / O chelating agent and nonionic surfactant, on the removal rates of two metals And the mechanism of action. The experimental results show that the removal rates of copper and cobalt increase with the increase of abrasive mass fraction, and the removal rate of cobalt is 20 ~ 30nm / min when the abrasive mass fraction is less than 5%, while the removal rate of copper is almost zero ; Addition of FA / O chelating agent can enhance the complexation with metal ions, thus accelerating the removal rate of copper and cobalt; non-ionic surfactants can effectively reduce the surface roughness of copper and cobalt. The synergistic effect of the various components of the polishing solution achieves the low surface roughness and high removal rate selectivity of the two materials.