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重掺杂半导体的反射率在最小反射率附近随入射波长的改变有较大的变化，而半导体材料的最小反射率波长λｍｉｎ决定于自由载流子浓度，故掺杂引起的热平衡载流子浓度的变化和光注入、ｐ－ｎ结注入引起的过剩载流子浓度的变化都会导致半导体红外反射率谱的改变，这种变化在最小反射率波长附近非常大。当过剩载流子浓度达到热平衡载流子浓度的０．２倍时，半导体对波长为λｍｉｎ的红外光的反射率从３％变化到４５％，利用这种变化可以实现半导体红外反射率的光调制和ｐ－ｎ结调制
The reflectance of the heavily doped semiconductor changes greatly with the change of the incident wavelength near the minimum reflectance, and the minimum reflectance wavelength λmin of the semiconductor material is determined by the free carrier concentration. Therefore, the thermal balance carrier concentration Changes and light injection, p-n junction injection caused by changes in excess carrier concentration will lead to semiconductor infrared reflectivity spectrum changes, this change in the minimum reflectance wavelength is very large. When the excess carrier concentration reaches 0.2 times the thermal equilibrium carrier concentration, the reflectance of the semiconductor for the infrared light having the wavelength λmin is changed from 3% to 45%, and the change of the semiconductor infrared reflectance Modulation and p-n junction modulation