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GaN基增强型高速开关器件是提升X波段微系统集成放大器工作效率的核心器件。介绍了凹槽栅结构、F-注入等制作GaN基增强型器件的关键技术,同时分析了场板、介质栅等对器件击穿特性的影响。针对影响GaN基功率器件开关特性的主要因素,重点分析了提高增强型GaN基功率器件开关频率的主要技术途径。减小器件的接触电阻、沟道方块电阻可以降低器件电阻对频率的影响。小栅长器件中栅电容较低,电子的沟道渡越时间较短,也可以提高器件的频率特性。此外,由于GaN基的功率器件频率高,设计应用在GaN器件上的栅驱动电路显得尤为重要。
GaN-based enhancement of high-speed switching devices is to enhance the work efficiency of X-band micro-system integrated amplifier core device. The key technologies of GaN-based enhancement devices such as groove-gate structure and F-implantation are introduced. Meanwhile, the influence of the field plate and dielectric gate on the breakdown characteristics of the device is analyzed. Aiming at the main factors affecting the switching characteristics of GaN-based power devices, the main technical approaches to improve the switching frequency of the enhanced GaN-based power devices are mainly analyzed. Reduce the contact resistance of the device, the channel resistance of the box can reduce the impact of device resistance on the frequency. Small gate device gate capacitance is low, the transit time of the electronic channel shorter, but also can improve the frequency characteristics of the device. In addition, because GaN-based power devices have high frequencies, it is important to design a gate drive circuit for GaN devices.