碳化硅(SiC)可以说是半导体中最老的化合物半导体,长期以来被用作避雷器及可变电阻材料。由于它的禁带宽度大以及通过掺杂可容易进行 p 型和 n 型两种导电型的控制,将其用作可见发光(尤其是蓝色等短波长发光)元件材料具有很高的吸引力。另外,SiC 具有很好的热、化学性能和很高的抗放射性能力,故很早就被人们期望用作能在苛刻环境下使用的电子元件材料。结晶的 SiC,以 Si 和 C 原子间距0.189nm的 SP~3混成轨迹的共价键为主,但由于电负度的差异,其离子性约占12%,且由于原子最密充填时产生的重迭差,存在各种结晶形 Silicon carbide (SiC) is arguably the oldest compound semiconductor in semiconductors and has long been used as a lightning arrester and a varistor material. Due to its large forbidden band width and easy control of both p-type and n-type conductivity by doping, it is attractive for use as a material for visible light emission (especially for short-wavelength light such as blue) . In addition, SiC has very good thermal and chemical properties and high anti-radioactivity, so it has long been expected to be used as an electronic component material that can be used in harsh environments. Crystalline SiC, with Si and C atoms spaced 0.189nm SP ~ 3 hybrid trajectory covalent bond based, but due to the difference of electronegativity, accounting for about 12% of the ionic, and due to the most dense atomic filling Poor overlap, there are a variety of crystal form