以P型<100>硅作为衬底,采用射频磁控溅射技术,在室温下制备了氮掺杂氧化铟锡锌薄膜晶体管(ITZO TFTs),研究了氮气流量对氧化铟锡锌薄膜晶体管结构、光学、电学特性以及稳定性的影响。实验结果表明:在不同氮气流量条件下制备的氧化铟锡锌薄膜均为非晶态,在可见光范围内的平均透过率均在90%左右,光学带隙数值在3.28~3.32 e V之间变化。在氮气流量为4 m L/min时制备的ITZO TFTs,有源层与栅极电介质界面处的界面态密度(N~(max)_s)仅为4.3×10~(11)cm~(-2),场效应迁移率(μ_(FE))为18.72 cm~2/(V·s),开关比(I_(on/off))为10~6,亚阈值摆幅(S)为0.39 V/dec,电学性能最优。栅极正偏压应力测试结果表明,该器件具有最强的稳定性。因此,适量的氮掺杂可有效地实现器件氧空位的钝化,降低器件的界面态密度,提高ITZO TFTs的电学性能及稳定性。 Using P-type <100> silicon as a substrate, nitrogen-doped indium tin oxide thin film transistors (ITZO TFTs) were prepared by RF magnetron sputtering at room temperature. The effects of nitrogen flux on the structure of indium tin oxide thin film transistor , Optical, electrical characteristics and stability of the impact. The experimental results show that the indium tin oxide films prepared under different nitrogen flow rates are amorphous, the average transmittance in the visible range is about 90%, the optical bandgap values ​​are between 3.28 and 3.32 eV Variety. In the ITZO TFTs prepared at a nitrogen flow rate of 4 m L / min, the interface state density (N max (subscript s)) at the interface between the active layer and the gate dielectric is only 4.3 × 10 ~ (11) cm ~ (-2) ), The field-effect mobility (μ_ (FE)) was 18.72 cm -2 / (V · s), the on / off ratio was 10-6 and the subthreshold swing was 0.39 V / dec, the best electrical performance. Positive grid bias stress test results show that the device has the strongest stability. Therefore, an appropriate amount of nitrogen doping can effectively deactivate the oxygen vacancy of the device, reduce the interface state density of the device, and improve the electrical performance and stability of the ITZO TFTs.