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化学机械抛光是晶片全局平坦化的关键技术,其中终点检测系统是影响抛光效果的关键。如果不能有效地检测抛光过程,便无法避免硅片产生抛光过度或抛光不足的缺陷。基于光学干涉薄膜测厚原理,给出了一种CMP在线终点检测装置。
Chemical mechanical polishing is the key technology of wafer global planarization. The end point detection system is the key to the polishing effect. If you can not effectively detect the polishing process, we can not avoid the silicon produced over or under polished defects. Based on the principle of optical interference film thickness measurement, a CMP online endpoint detection device is presented.